1/8 preliminary data october 2003 this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change wit hout notice. STB80NF04 stp80nf04 n-channel 40v - 0.008 w - 80a d2pak/to-220 stripfet? ii power mosfet n typical r ds (on) = 0.008 w n exceptional dv/dt capability n 100% avalanche tested n application oriented characterization n surface-mounting d2pak (to-263) power package in tape & reel (suffix t4") description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip- based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n high current, high switching speed type v dss r ds(on) i d STB80NF04 stp80nf04 40 v 40 v < 0.010 w < 0.010 w 80 a 80 a 1 2 3 to-220 1 3 d 2 pak to-263 (suffix t4) internal schematic diagram ordering information absolute maximum ratings ( ) pulse width limited by safe operating area. (1) i sd 80a, di/dt 200a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 40a, v dd = 20v sales type marking package packaging STB80NF04t4 stp80nf04 b80nf04 p80nf04 to-263 to-220 tape & reel tube symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v dgr drain-gate voltage (r gs = 20 k w ) 40 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 80 a i d drain current (continuous) at t c = 100c 60 a i dm ( ) drain current (pulsed) 320 a p tot total dissipation at t c = 25c 150 w derating factor 1.0 w/c dv/dt (1) peak diode recovery voltage slope 5 v/ns e as (2) single pulse avalanche energy 650 mj t stg storage temperature -55 to 175 c t j operating junction temperature
STB80NF04 stp80nf04 2/8 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose (1.6 mm from case, for 10 sec) max max 1.0 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 24v r ds(on) static drain-source on resistance v gs = 10 v i d = 40 a 0.008 0.010 w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 25 v i d = 15 a 20 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v f = 1 mhz v gs = 0 2600 680 140 pf pf pf
3/8 STB80NF04 stp80nf04 switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 20 v i d = 40 a r g = 4.7 w v gs = 10 v (resistive load, figure 3) 24 122 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20 v i d = 80 a v gs = 10 v 60 19 21 82 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 20 v i d = 40 a r g = 4.7 w, v gs = 10 v (resistive load, figure 3) 34 20 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 80 320 a a v sd (*) forward on voltage i sd = 80 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a di/dt = 100a/s v dd = 30 v t j = 150c (see test circuit, figure 5) 85 230 5.5 ns nc a electrical characteristics (continued)
STB80NF04 stp80nf04 4/8 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
5/8 STB80NF04 stp80nf04 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 8 0 8 d 2 pak mechanical data
STB80NF04 stp80nf04 6/8 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.40 0.645 l3 28.90 1.137 l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 dia 3.75 3.85 0.147 0.151 to-220 mechanical data
7/8 STB80NF04 stp80nf04 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix t4)* d 2 pak footprint tape mechanical data
STB80NF04 stp80nf04 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. a 2003 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com
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